] Samsung Electronics
said on March 16 that it will announce technical details of more advanced flash memory chips in May.
Samsung started mass production of NAND flash memory chips with a circuitry width of 10 nanometers last October. A nanometer is one billionth of a meter.
In a statement, Samsung said it will unveil a technology roadmap and technical details of flash memory chips with a circuitry width of 8 nanometers and 6 nanometers at the company’s annual forum in May. Finer circuitry technology reduces the size of a chip and power consumption.
“Samsung’s foundry technology roadmap and technical details, including the newest 8nm and the 6nm, will first be open to its customers and partners at the upcoming US Samsung Foundry Forum scheduled for May 24, 2017,” Samsung said in the statement.
By Alex Lee and newswires (email@example.com