Samsung Electronics said on Feb. 27 that it has started mass production of the world’s first 512GB embedded Universal Flash Storage solution for use in next-generation mobile devices, with faster read and write speeds.
The firm rates the new 512GB eUFS 3.0 for sequential read speeds up to 2,100 MB/s, twice as fast as the existing eUFS 2.1’s read speeds. The new storage device is also more than 1.5-times faster than the existing eUFS 2.1‘s in terms of sequential write speeds, Samsung said.
This performance enables transfer of a full HD video clip to a PC in about three seconds, making it more than 20-times faster than a typical microSD card.
The new 512GB eUFS package uses Samsung’s latest 512-gigabit V-NAND chips.
In January, Samsung said it has begun mass producing the world’s first one-terabyte eUFS for use in data-heavy mobile applications.
By Ram Garikipati and newswires (firstname.lastname@example.org)