Samsung Electronics said on March 6 it has started mass production of its first commercial embedded magnetic random access memory devices with enhanced writing speed and energy efficiency.
The eMRAM is based on the company’s 28-nanometer fully depleted silicon-on-insulator process technology, called 28FDS, Samsung said.
The new memory solution enhances power and speed with lower cost than eFlash because it does not require an erase cycle before writing data, the company said.
The world’s largest memory chipmaker said the eMRAM solution will be used in various applications, including microcontrollers, Internet of Things and artificial intelligence.
The tech giant said it plans to expand its options for high-density embedded non-volatile memory solutions, including a tape-out of a 1 gigabit eMRAM test chip within this year.
By Ram Garikipati and newswires (firstname.lastname@example.org)