Semiconductor powerhouse Samsung Electronics said March 21 that it has developed a third-generation 10-nanometer-class Double Data Rate 4 DRAM chip for the first time in the world. The announcement came 16 months after the firm started mass-production of the second-gen mid-10 nm, or 1y nm, DRAM chip.
The development of the DRAM chip based on low-10 nm, or 1z nm, semiconductor fabrication technology was achieved without using extreme ultraviolet processing, a type of advanced lithography technology often required to build tiny chips.
The new DRAM chip boasts 20 percent higher manufacturing productivity compared with 1y nm chips.
Mass-production is scheduled to begin in the second half of this year to cater to the demand of manufacturers of enterprise servers and high-end PCs, according to the tech giant.
“We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency,” said Lee Jung-bae, an executive vice president at Samsung’s DRAM unit.
“As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling proliferation of the premium memory market.”
By Kim Young-won (firstname.lastname@example.org)