[THE INVESTOR] South Korea’s second-largest chipmaker SK hynix took the wraps off its new mobile DRAM chip, which will be mounted on tech giant Samsung Electronics' upcoming flagship smartphone, Galaxy S8, on Jan. 9.
The Low Power Double Data Rate 4X chip boasts the world’s highest density of 8 gigabytes and is 20 percent more power efficient than the current LPDDR4.
The company said it used the so-called dual-channel technology to connect two 8-gigabit DRAM chips and stacked them in four layers to build the newly released DRAM chip.
The new memory chip measuring 12 millimeters by 12.7 millimeters with its depth coming in at 1 millimeter takes up around 30 percent lesser space in a mobile device than the existing 8GB DRAM chip, which will allow more leeway for smartphone design, according to the firm.
It can process 34.1GB data per second with 64-bit input-output ports.
“SK hynix’s chips will be able to help smartphone users maximize their mobile experience,” said Oh Jong-hoon, the head of the firm’s DRAM product development division.
“The company plans to expand the usage of the product to various applications such as high-end laptops and automotive electronics as well as mobile gadgets,” he added.
SK hynix’s new memory chip is expected to be used in Samsung’s Galaxy S8 and Apple’s iPhone 8, which are forecast to be released in April and September, respectively, this year.
According to research firm IHS Markit, the average storage density in high-end smartphones will increase from 3.5GBs this year to 6.9GBs in 2020.
In addition, demand for 8GB mobile DRAM will exponentially increase this year and become mainstream in the high-end smartphone segment.
By Kim Young-won (email@example.com)